It is well established that quantum interference (QI) effects in molecular junctions can dramatically change electron transport by several orders of magnitude. As QI effects can be tailored by a variety of chemical and physical mechanisms and can survive even at room temperature, they hold great potential for nanoelectronics applications. I give an overview of experimental evidence of QI and characterize its distinctive features and origin from a theoretical perspective. As time allows, I will show how and why 1 QI can be exploited to enhance the performance of chemical sensors 2, thermoelectric, and spintronic 3 devices.

1 A. Valli, T. Fabian, F. Libisch, and R. Stadler, Carbon 214, 118358 (2023)

2 Ö. Şengül, J. Völkle, A. Valli, and R. Stadler, Phys. Rev. B 105, 165428 (2022)

3 A. Valli, A. Amaricci, V. Brosco, and M. Capone, Nano Lett. 18, 2158 (2018)